The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Feb. 09, 2011
Yoshifumi Ohta, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Yoshifumi Ohta, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method includes: a step of forming a gate electrode () on a substrate (); a step of forming a gate insulating film () to cover the gate electrode (), and then forming an In-Ga-Zn-O-based oxide semiconductor layer () in which a ratio of In:Ga:Zn in atomic % is 1:1:1 or 4:5:1 on the gate insulating film () to overlap the gate electrode (); a step of forming a source electrode () and a drain electrode () on the oxide semiconductor layer () to overlap the gate electrode () and to face each other; and a step of performing an annealing process in an atmosphere containing steam (S) on the substrate () provided with the source electrode () and the drain electrode ().