The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Feb. 21, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, KR;
Inventors:
Assignee:
Samsung Display Co., Ltd., Yongin, Gyunggi-Do, unknown;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 51/00 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 29/78603 (2013.01); H01L 27/1214 (2013.01); H01L 51/003 (2013.01); H01L 27/1266 (2013.01); G02F 1/133351 (2013.01);
Abstract
A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.