The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
May. 20, 2011
Hsin-hsien Wu, Hsinchu, TW;
Chyi Shyuan Chern, Taipei, TW;
Chun-lin Chang, Jhubei, TW;
Ching-wen Hsiao, Hsinchu, TW;
Kuang-huan Hsu, Hsinchu, TW;
Hsin-Hsien Wu, Hsinchu, TW;
Chyi Shyuan Chern, Taipei, TW;
Chun-Lin Chang, Jhubei, TW;
Ching-Wen Hsiao, Hsinchu, TW;
Kuang-Huan Hsu, Hsinchu, TW;
TSMC Solid State Lighting Ltd., Hsin-Chu, TW;
Abstract
A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.