The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Jan. 27, 2012
Applicants:

Masaki Ueno, Itami, JP;

Toshio Ueda, Itami, JP;

Eiryo Takasuka, Itami, JP;

Inventors:

Masaki Ueno, Itami, JP;

Toshio Ueda, Itami, JP;

Eiryo Takasuka, Itami, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C30B 35/00 (2006.01); C23C 16/30 (2006.01); C30B 25/16 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45585 (2013.01); C23C 16/45504 (2013.01); C30B 35/00 (2013.01); C23C 16/303 (2013.01); C30B 25/165 (2013.01);
Abstract

Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.


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