The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Aug. 23, 2005
Applicants:
Kenji Kohiro, Tsukuba, JP;
Kazumasa Ueda, Tsuchiura, JP;
Masahiko Hata, Tsuchiura, JP;
Inventors:
Assignee:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 21/02639 (2013.01); H01L 21/02395 (2013.01); H01L 21/02579 (2013.01); H01L 21/02546 (2013.01); H01L 29/66136 (2013.01);
Abstract
Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0×10.