The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jun. 27, 2012
John A. Fifield, Underhill, VT (US);
Mark D. Jacunski, Colchester, VT (US);
John A. Fifield, Underhill, VT (US);
Mark D. Jacunski, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a memory array structure, where a wordline driver selectively applies a high on-state voltage (VWLH) or a low off-state voltage (VWLL) to a wordline. VWLH has a slightly negative temperature coefficient so that it is regulated as high as the gate dielectric reliability limits allow, whereas VWLL has a substantially neutral temperature coefficient. To accomplish this, the wordline driver is coupled to one or more voltage regulation circuits. In one embodiment, the wordline driver is coupled to a single voltage regulation circuit, which incorporates a single voltage reference circuit having a single output stage that outputs multiple reference voltages. Also disclosed is a voltage reference circuit, which can be incorporated into the voltage regulation circuit of a memory array structure, as described, or, alternatively, into any other integrated circuit structure requiring voltages with different temperature coefficients. Also disclosed is a method of operating a memory array structure.