The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Mar. 15, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Hitoshi Iwai, Kamakura, JP;
Shirou Fujita, Kamakura, JP;
Hiroshi Sukegawa, Tokyo, JP;
Toshio Fujisawa, Yokohama, JP;
Tokumasa Hara, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 27/115 (2006.01); G11C 16/08 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); H01L 27/11582 (2013.01); G11C 16/08 (2013.01); G11C 29/82 (2013.01); H01L 27/1157 (2013.01); G11C 16/0483 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes a plurality of blocks. The blocks includes a first selection transistor, a second selection transistor, a plurality of memory cell transistors, a first selection gate line and a second selection gate line, and word lines. One of the blocks holds information on a word line, a first selection gate line and/or a second selection gate line including a short-circuiting defect.