The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

May. 03, 2012
Applicants:

Sang-won Shim, Seoul, KR;

Pan-suk Kwak, Seoul, KR;

Ki-tae Park, Seongnam-si, KR;

Yoon-hee Choi, Hwaseong-si, KR;

Inventors:

Sang-Won Shim, Seoul, KR;

Pan-Suk Kwak, Seoul, KR;

Ki-Tae Park, Seongnam-si, KR;

Yoon-Hee Choi, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 7/00 (2006.01); G04B 25/02 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0433 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 16/0483 (2013.01);
Abstract

A nonvolatile memory device including memory blocks, a pre-decoder, and a row decoder is disclosed. Each of the memory blocks has a plurality of memory cells. The pre-decoder includes a multiplexer and negative level shifters. The multiplexer is configured to generate multiplexing signals in response to address signals. Each of the negative level shifters is configured to generate a converted multiplexing signal corresponding to a respective multiplexing signal by converting a multiplexing signal having a ground voltage into a converted multiplexing signal having a first negative voltage. The row decoder is configured to select at least one of the memory blocks in response to the converted multiplexing signals.


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