The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8902645 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 02, 2014

Filed:

Sep. 23, 2013
Applicant:

Seiko Instruments Inc., Chiba, JP;

Inventor:

Kazuhiro Tsumura, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/12 (2006.01); G11C 16/06 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/12 (2013.01); G11C 16/06 (2013.01);
Abstract

Provided is a semiconductor memory circuit excellent in long-term reliability and reading characteristics and having low current consumption. The semiconductor memory circuit includes: a first inverter; a first non-volatile memory, which is electrically writable; a second inverter; and a second non-volatile memory, the first inverter having an output connected to a source of the first non-volatile memory, the first non-volatile memory having a drain connected to an input of the second inverter, the second inverter having an output connected to a source of the second non-volatile memory, the second non-volatile memory having a drain connected to an input of the first inverter, the drain of the second non-volatile memory serving as an output of the semiconductor memory circuit.


Find Patent Forward Citations

Tsumura, Kazuhiro. (2014). Semiconductor memory circuit (U.S. Patent No. 8902645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8902645

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