The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Dec. 06, 2011
Applicants:

Noboru Sakimura, Tokyo, JP;

Ryusuke Nebashi, Tokyo, JP;

Tadahiko Sugibayashi, Tokyo, JP;

Inventors:

Noboru Sakimura, Tokyo, JP;

Ryusuke Nebashi, Tokyo, JP;

Tadahiko Sugibayashi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/14 (2006.01); H01L 29/82 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/12 (2013.01); G11C 11/161 (2013.01); G11C 11/1653 (2013.01);
Abstract

A magnetoresistive elementhaving a memory cellaccording to the present invention contains a first lower terminal nand a second lower terminal nrespectively connected to both ends of a conductive layerwhose longitudinal direction is different from the column direction (X direction). Further, the gates of the first transistors Mrespectively included in two memory cells among the plurality of memory cellsand adjacent to each other in a row direction (Y direction) are commonly connected to a first word line. As a result, without increase of the cell area, it becomes possible to reserve a margin in the dimension of the cell structure or in the process for MRMA.


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