The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Mar. 15, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Masayoshi Iwayama, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); H01L 43/08 (2006.01); H01L 27/24 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); H01L 45/16 (2013.01); H01L 43/08 (2013.01); H01L 27/2436 (2013.01); H01L 45/1233 (2013.01); H01L 43/12 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/1675 (2013.01); H01L 27/228 (2013.01);
Abstract

According to one embodiment, a memory includes a resistance change element on an interlayer insulating film and including a lower electrode and an upper electrode, a sidewall insulating film on a side surface of the element, a plug in the interlayer insulating film and connected to the lower electrode, an interconnect on the interlayer insulating film and connected to the upper electrode. The element is provided immediately above the plug, the interconnect covers the side surface of the element via the sidewall insulating film, an upper surface of the first plug is covered with the lower electrode and the sidewall insulating film.


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