The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Mar. 13, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung-Yeon Lee, Seoul, KR;

Yeong-Taek Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 16/34 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0064 (2013.01); G11C 7/1006 (2013.01); G11C 16/3454 (2013.01);
Abstract

A nonvolatile memory device comprises a resistive memory cell, a write driver configured to write data to the resistive memory cell during a write period comprising a plurality of loops, and a sense amplifier configured to verify whether the data is correctly written to the resistive memory cell in each of the loops. Where the sense amplifier verifies that the data is correctly written in a k-th loop among the loops, the write driver is disabled from a (k+1)-th loop to an end of the write period.


Find Patent Forward Citations

Lee, Sung-Yeon. (2014). Resistive memory device comprising selectively disabled write driver (U.S. Patent No. 8902633). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8902633

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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