The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Mar. 15, 2013
Qualcomm Incorporated, San Diego, CA (US);
Narendra Singh Mehta, Santa Clara, CA (US);
Lennart Karl-Axel Mathe, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).