The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 05, 2013
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventor:
Tatsufumi Kurokawa, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 9/04 (2013.01);
Abstract
Disclosed is a semiconductor device that includes an N-channel MOS transistor and a control voltage generation circuit. The N-channel MOS transistor controls the supply of a power supply voltage obtained by stepping down a DC voltage. The control voltage generation circuit clips the gate voltage of the N-channel MOS transistor at a control voltage not higher than a predetermined voltage in accordance with the DC voltage.
Quick Actions:
Kurokawa, Tatsufumi. (2014). Semiconductor device (U.S. Patent No. 8901985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8901985
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile