The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Jul. 27, 2012
Applicants:

Noboru Akiyama, Hitachinaka, JP;

Takayuki Hashimoto, Tokai, JP;

Takashi Hirao, Hitachinaka, JP;

Nobuyoshi Matsuura, Takasaki, JP;

Hideo Ishii, Takasaki, JP;

Inventors:

Noboru Akiyama, Hitachinaka, JP;

Takayuki Hashimoto, Tokai, JP;

Takashi Hirao, Hitachinaka, JP;

Nobuyoshi Matsuura, Takasaki, JP;

Hideo Ishii, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05B 37/02 (2006.01); H01L 29/78 (2006.01); H05B 33/08 (2006.01); G09G 3/34 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/7811 (2013.01); G09G 2320/064 (2013.01); H01L 29/0619 (2013.01); H05B 33/089 (2013.01); H05B 33/0827 (2013.01); H05B 33/0818 (2013.01); H01L 29/41766 (2013.01); G09G 3/342 (2013.01); H01L 29/0615 (2013.01); Y02B 20/347 (2013.01); H01L 29/7803 (2013.01);
Abstract

The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.


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