The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jan. 08, 2013
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Tomiyasu Saito, Yokohama, JP;
Tatsuya Mise, Yokohama, JP;
Hiromichi Ichikawa, Yokohama, JP;
Tetsuya Takeuchi, Yokohama, JP;
Genshi Okuda, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.