The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Mar. 09, 2011
Applicants:

Michael Brennan, Campbell, CA (US);

Scott Bell, San Jose, CA (US);

Inventors:

Michael Brennan, Campbell, CA (US);

Scott Bell, San Jose, CA (US);

Assignees:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 27/115 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/115 (2013.01); H01L 29/66795 (2013.01); H01L 21/3088 (2013.01); H01L 27/11521 (2013.01); H01L 21/0338 (2013.01); H01L 27/11568 (2013.01);
Abstract

A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.


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