The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jul. 27, 2012
Hans Mertens, Leuven, BE;
Johannes Theodorus Marinus Donkers, Valkenswaard, NL;
Evelyne Gridelet, Omal, BE;
Tony Vanhoucke, Bierbeek, BE;
Petrus Hubertus Cornelis Magnee, Malden, NL;
Hans Mertens, Leuven, BE;
Johannes Theodorus Marinus Donkers, Valkenswaard, NL;
Evelyne Gridelet, Omal, BE;
Tony Vanhoucke, Bierbeek, BE;
Petrus Hubertus Cornelis Magnee, Malden, NL;
NXP, B.V., Eindhoven, NL;
Abstract
A method of manufacturing an integrated circuit comprising bipolar transistors including first and second type bipolar transistors, the method comprising providing a substrate comprising first isolation regions each separated from a second isolation region by an active region comprising a collector impurity of one of the bipolar transistors; forming a base layer stack over the substrate; forming a first emitter cap layer of a first effective thickness over the base layer stack in the areas of the first type bipolar transistor; forming a second emitter cap layer of a second effective thickness different from the first effective thickness over the base layer stack in the areas of the second type bipolar transistor; and forming an emitter over the emitter cap layer of each of the bipolar transistors. An IC in accordance with this method.