The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Feb. 01, 2011
Naoki Makita, Osaka, JP;
Hiroki Mori, Osaka, JP;
Masaki Saitoh, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (), and the second thin film transistor has a second semiconductor layer (). The first semiconductor layer () and the second semiconductor layer () are formed from one and the same film. Each of the first semiconductor layer () and the second semiconductor layer () has a slope portion () positioned in the periphery and a main portion () which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion () of the first semiconductor layer with higher density than the main portion () of the first semiconductor layer, the main portion () of the second semiconductor layer, and the slope portion () of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.