The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Apr. 17, 2013
Applicants:

Sung-il Cho, Seoul, KR;

Nam-gun Kim, Seoul, KR;

Jin-young Kim, Hwaseong-si, KR;

Hyun-chul Yoon, Seongnam-si, KR;

Bong-soo Kim, Seongnam-si, KR;

Kwan-sik Cho, Hwaseong-si, KR;

Inventors:

Sung-Il Cho, Seoul, KR;

Nam-Gun Kim, Seoul, KR;

Jin-Young Kim, Hwaseong-si, KR;

Hyun-Chul Yoon, Seongnam-si, KR;

Bong-Soo Kim, Seongnam-si, KR;

Kwan-Sik Cho, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/42324 (2013.01); H01L 27/10873 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10894 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.


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