The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Mar. 11, 2013
Applicants:
Sheng-wei Yang, Taoyuan County, TW;
Ying-cheng Chuang, Taoyuan County, TW;
Shyam Surthi, Boise, ID (US);
Inventors:
Sheng-Wei Yang, Taoyuan County, TW;
Ying-Cheng Chuang, Taoyuan County, TW;
Shyam Surthi, Boise, ID (US);
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/06 (2006.01); H01L 21/765 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/765 (2013.01);
Abstract
Provided is a method for fabricating a semiconductor device, including the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar. A doped region is formed in the substrate and below each pillar. The doped region below each trench is removed to form an opening such that the doped regions below the adjacent pillars are separated from each other. A shielding layer is formed in each opening.