The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jun. 03, 2013
Electronics and Telecommunications Research Institute, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Seong-Il Kim, Daejeon, KR;
Sang-Heung Lee, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A high electron mobility transistor includes a T-type gate electrode disposed on a substrate between source and drain electrodes and insulating layers disposed between the substrate and the T-type gate electrode. The insulating layers include first, second, and third insulating layers. The third insulating layer is disposed between the substrate and a head portion of the T-type gate electrode such that a portion of the third insulating layer is in contact with a foot portion of the T-type gate electrode. The second insulating layer is disposed between the substrate and the head portion of the T-type gate electrode to be in contact with the third insulating layer. The first insulating layer and another portion of the third insulating layer are sequentially stacked between the substrate and the head portion of the T-type gate electrode to be in contact with the second insulating layer.