The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Feb. 22, 2013
Applicants:
Stmicroelectronics (Tours) Sas, Tours, FR;
Universite Francois Rabelais Ufr Sciences ET Techniques, Tours Cedex, FR;
Inventors:
Assignees:
STMicroelectronics (Tours) SAS, Tours, FR;
Universite Francois Rabelais UFR Sciences et Techniques, Tours Cedex, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/06 (2006.01); H01L 29/747 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/747 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01); H01L 29/0638 (2013.01); H01L 29/66386 (2013.01);
Abstract
A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.