The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Jul. 12, 2011
Applicants:

Hak Hwan Kim, Gyunggi-do, KR;

Ho Sun Paek, Gyunggi-do, KR;

Hyung Kun Kim, Gyunggi-do, KR;

Sung Kyong OH, Gyunggi-do, KR;

Jong IN Yang, Gyunggi-do, KR;

Inventors:

Hak Hwan Kim, Gyunggi-do, KR;

Ho Sun Paek, Gyunggi-do, KR;

Hyung Kun Kim, Gyunggi-do, KR;

Sung Kyong Oh, Gyunggi-do, KR;

Jong In Yang, Gyunggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/385 (2013.01); H01L 33/0095 (2013.01); H01L 33/382 (2013.01);
Abstract

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.


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