The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Aug. 27, 2013
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/1045 (2013.01); H01L 29/45 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/7813 (2013.01); H01L 29/4236 (2013.01); H01L 29/1095 (2013.01);
Abstract
A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type; source regions of the first conductivity type, formed on a surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed, the inside surface of the trenches are covered by a gate insulating film, and the gate electrodes comprise surface-facing parts, which are buried in the trenches.