The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Sep. 13, 2013
Applicant:

E Ink Holdings Inc., Hsinchu, TW;

Inventors:

Wei-Chou Lan, Hsinchu, TW;

Ted-Hong Shinn, Hsinchu, TW;

Assignee:

E Ink Holdings Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 33/00 (2010.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0041 (2013.01); H01L 27/3262 (2013.01); H01L 27/3244 (2013.01); H01L 27/1203 (2013.01); H01L 27/1214 (2013.01); H01L 29/4908 (2013.01);
Abstract

A semiconductor device adapted for being disposed on a substrate is provided. The semiconductor device includes a pixel electrode, a drain, a semiconductor channel layer, a source, a gate insulation layer and a side-gate. The pixel electrode is disposed on the substrate. The drain is disposed on the pixel electrode and exposes a portion of pixel electrode. The semiconductor channel layer is disposed on the drain. The source is disposed on the semiconductor channel layer. The gate insulation layer is disposed on the substrate, at least covers the source and surrounds the semiconductor channel layer. The side-gate is disposed on the gate insulation layer and extendedly covers the substrate along at least one side of the gate insulation layer. An extending direction of a portion of the side-gate is identical to a stacking direction of the drain, the semiconductor channel layer and the source.


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