The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 22, 2011
Applicants:
Yasuhiro Yamada, Kanagawa, JP;
Tsutomu Tanaka, Kanagawa, JP;
Makoto Takatoku, Kanagawa, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/12 (2006.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H04N 5/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14663 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01); H04N 5/32 (2013.01);
Abstract
There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less.