The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Mar. 18, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jie Ai Yu, Suwon-si, KR;

Duck Hwan Kim, Goyang-si, KR;

In Sang Song, Osan-si, KR;

Jing Cui, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 29/745 (2006.01); H01L 29/76 (2006.01); H01L 21/336 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01); H03H 3/007 (2006.01); H03H 9/24 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00134 (2013.01); B81B 3/0018 (2013.01); H03H 3/0072 (2013.01); H03H 9/2463 (2013.01);
Abstract

A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.


Find Patent Forward Citations

Loading…