The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Dec. 14, 2012
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jin Ku Lee, Gyeonggi-do, KR;

Min Yong Lee, Gyeonggi-do, KR;

Jong Chul Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/00 (2013.01); H01L 45/144 (2013.01); H01L 45/06 (2013.01); H01L 27/2409 (2013.01);
Abstract

A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.


Find Patent Forward Citations

Lee, Jin. (2014). Phase-change random access memory and method of manufacturing the same (U.S. Patent No. 8901528). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8901528

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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