The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Sep. 28, 2009
Applicant:
John Roberts, Sheffield, GB;
Inventor:
John Roberts, Sheffield, GB;
Assignee:
JDS Uniphase Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0735 (2012.01); H01L 31/06 (2012.01); H01L 31/0304 (2006.01); H01L 31/076 (2012.01); B82Y 20/00 (2011.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); Y02E 10/548 (2013.01); H01L 31/03046 (2013.01); Y02E 10/544 (2013.01); H01L 31/076 (2013.01); B82Y 20/00 (2013.01);
Abstract
The disclosure relates to multiple quantum well (MQW) structures for intrinsic regions of monolithic photovoltaic junctions within solar cells which are substantially lattice matched to GaAs or Ge. The disclosed MQW structures incorporate quantum wells formed of quaternary InGaAsP, between barriers of InGaP.