The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Apr. 18, 2013
Habib Hichri, Poughkeepsie, NY (US);
Xi LI, Somers, NV (US);
Richard Wise, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention may include first providing a stack of layers including a semiconductor substrate, a buried oxide layer on the semiconductor substrate, a semiconductor-on-insulator layer on the buried-oxide layer, a nitride layer on the semiconductor-on-insulator layer, and a silicon oxide layer on the nitride layer. A first opening and second opening with a smaller cross-sectional area than the first opening are then formed in the silicon oxide layer, the nitride layer, the semiconductor-on-insulator layer, and the buried-oxide layer. The first opening and the second opening are then etched with a first etching gas. The first opening and the second opening are then etched with a second etching gas, which includes the first etching gas and a halogenated silicon compound, for example, silicon tetrafluoride or silicon tetrachloride. In one embodiment, the first etching gas includes hydrogen bromide, nitrogen trifluoride, and oxygen.