The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Oct. 15, 2012
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A compound semiconductor device is manufactured by forming an III-nitride compound semiconductor device structure on a silicon-containing semiconductor substrate, the III-nitride compound semiconductor device structure including a GaN alloy on GaN and a channel region arising near an interface between the GaN alloy and the GaN. One or more silicon-containing insulating layers are formed on a surface of the III-nitride compound semiconductor device structure adjacent the GaN alloy, and a contact opening is formed which extends through the one or more silicon-containing insulating layers to at least the GaN alloy. A region of GaN is regrown in the contact opening, and the regrown region of GaN is doped exclusively with Si out-diffused from the one or more silicon-containing insulating layers to form an ohmic contact which is doped only with the Si out-diffused from the one or more silicon-containing insulating layers.