The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
May. 11, 2013
François Hébert, San Mateo, CA (US);
François Hébert, San Mateo, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A vertical semiconductor power device includes a top surface and a bottom surface of a semiconductor substrate constituting a vertical current path for conducting a current there through. The semiconductor power device further includes an over current protection layer composed of a material having a resistance with a positive temperature coefficient (PTC) and the over current protection layer constituting as a part of the vertical current path connected to a source electrode and providing a feedback voltage a gate electrode of the vertical semiconductor power device for limiting a current passing there through for protecting the semiconductor power device at any voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile