The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Jan. 28, 2014
Applicants:

Francis J. Kub, Arnold, MD (US);

Travis Anderson, Alexandria, VA (US);

Karl D. Hobart, Upper Marlboro, MD (US);

Michael A. Mastro, Fairfax, VA (US);

Charles R. Eddy, Jr., Columbia, MD (US);

Inventors:

Francis J. Kub, Arnold, MD (US);

Travis Anderson, Alexandria, VA (US);

Karl D. Hobart, Upper Marlboro, MD (US);

Michael A. Mastro, Fairfax, VA (US);

Charles R. Eddy, Jr., Columbia, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/08 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/66431 (2013.01); H01L 29/42368 (2013.01); H01L 29/7783 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/0891 (2013.01); H01L 29/0847 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/42316 (2013.01); H01L 29/205 (2013.01); H01L 29/42376 (2013.01); H01L 29/4236 (2013.01);
Abstract

High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.


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