The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jun. 19, 2013
Richard Spitz, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Robert Kolb, Gross-Umstadt, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
In a method for manufacturing a diode, a semiconductor crystal wafer is used to produce a p-n or n-p junction, which extends in planar fashion across the top side of a semiconductor crystal wafer. Separation edges form perpendicularly to the top side of the semiconductor crystal wafer, which edges extend across the p-n or n-p junction. The separation of the semiconductor crystal wafer is achieved in that, starting from a disturbance, a fissure is propagated by local heating and local cooling of the semiconductor crystal wafer. The separation fissure thus formed extends along crystal planes of the semiconductor crystal, which avoids the formation of defects in the area of the p-n or n-p junction.