The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
May. 29, 2012
Yudai Takanishi, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Takatsugu Kusumi, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Takatsugu Kusumi, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of manufacturing a TFT substrate includes: forming a gate electrode () and a gate insulating film () on a substrate (); forming a source electrode () and a drain electrode () at a gap from each other on the gate insulating film (), and forming a drain connection part (); forming, after the step of forming the source electrode and the drain electrode, an oxide semiconductor layer () that contains a channel portion connecting the source electrode () to the drain electrode () and that contains an additional portion () covering the drain connection part (); oxidizing a surface of the oxide semiconductor layer (); forming a contact hole () in an insulating film () that covers the oxide semiconductor layer; removing a portion of the additional portion () of the oxide semiconductor layer that is located inside the contact hole (); and forming a conductive layer () that electrically connects the drain connection part () that has been exposed.