The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Jun. 11, 2010
Applicants:

Shingo Masui, Anan, JP;

Tomonori Morizumi, Anan, JP;

Inventors:

Shingo Masui, Anan, JP;

Tomonori Morizumi, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01S 5/22 (2006.01); B82Y 20/00 (2011.01); H01L 21/02 (2006.01); H01S 5/028 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); B82Y 20/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01S 5/0282 (2013.01); H01S 5/2009 (2013.01); H01S 5/2214 (2013.01); H01S 5/3063 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01);
Abstract

A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.


Find Patent Forward Citations

Loading…