The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jul. 29, 2011
Applicants:
Klaus Kunze, Carlsbad, CA (US);
Gregory Nyce, Pleasanton, CA (US);
Wenzhuo Guo, Cupertino, CA (US);
Inventors:
Assignee:
Thin Film Electronics, Inc., Oslo, NO;
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H01L 51/00 (2006.01); H01B 3/18 (2006.01); C01B 33/04 (2006.01); C01B 6/06 (2006.01);
U.S. Cl.
CPC ...
C01B 6/06 (2013.01); H01L 51/0094 (2013.01); Y02E 10/549 (2013.01); H01B 3/18 (2013.01); C01B 33/04 (2013.01);
Abstract
Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SiHand SiH, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.