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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8900538 B1

PDFFull Text
Expired
Date of Patent:
Dec. 02, 2014

Filed:

Jul. 31, 2011

Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh

Applicants:

Ahmed Abou-kandil, Elmsford, NY (US);

Ahmed Maarouf, Mohegan Lake, NY (US);

Glenn J. Martyna, Croton on Hudson, NY (US);

Hisham Mohamed, Clifton Park, NY (US);

Dennis M. Newns, Yorktown Heights, NY (US);

Inventors:

Ahmed Abou-Kandil, Elmsford, NY (US);

Ahmed Maarouf, Mohegan Lake, NY (US);

Glenn J. Martyna, Croton on Hudson, NY (US);

Hisham Mohamed, Clifton Park, NY (US);

Dennis M. Newns, Yorktown Heights, NY (US);

Assignees:

International Business Machines Corporation, Armonk, NY (US);

Egypt Nanotechnology Center, Giza, EG;

Attorneys:

Vazken Alexanian

McGinn IP Law Group, PLLC

Primary Examiner:

David Vu

Assistant Examiner:

Jonathan Han

Int. Cl.
CPC ...
C01B 31/00 (2006.01); C01B 35/18 (2006.01); C01D 15/00 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); C01B 31/04 (2006.01);
U.S. Cl.
CPC ...
C01B 31/0484 (2013.01); H01L 29/1606 (2013.01); H01L 29/78 (2013.01);
Abstract

A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element.

Find Patent Forward Citations

Abou-Kandil, Ahmed. (2014). Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh (U.S. Patent No. 8900538). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8900538

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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