The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Mar. 08, 2011
Akiharu Miyanaga, Hadano, JP;
Tatsuya Honda, Isehara, JP;
Takatsugu Omata, Isehara, JP;
Yusuke Nonaka, Atsugi, JP;
Akiharu Miyanaga, Hadano, JP;
Tatsuya Honda, Isehara, JP;
Takatsugu Omata, Isehara, JP;
Yusuke Nonaka, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as 'gallium oxide compound film') containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.