The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Feb. 17, 2009
Applicants:

Mitsuo Tomiyama, Chiba, JP;

Takashi Kobayashi, Chiba, JP;

Kazuyoshi Sugama, Chiba, JP;

Inventors:

Mitsuo Tomiyama, Chiba, JP;

Takashi Kobayashi, Chiba, JP;

Kazuyoshi Sugama, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/15 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/21 (2006.01); C30B 29/18 (2006.01); C30B 33/08 (2006.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H03H 9/0542 (2013.01); H03H 9/1021 (2013.01); H03H 9/21 (2013.01); C30B 29/18 (2013.01); C30B 33/08 (2013.01); H03H 2003/026 (2013.01);
Abstract

To fabricate a plurality of piezoelectric vibrating pieces while firmly preventing a defect, a crack, or a breakage from being brought about at a wafer in the midst of fabrication, there is provided a method of fabricating a piezoelectric vibrating piece which is a method of fabricating a plurality of piezoelectric vibrating pieces from a wafer S, the method including a film forming step of respectively forming metal films M on both faces of the wafer, a patterning step of removing a region of the metal film on an inner side of an outer peripheral end of the wafer by a constant distance H, thereafter, patterning the metal film M to outer shapes of the plurality of piezoelectric vibrating pieces, an outer shape forming step of forming outer shapes of the plurality of piezoelectric vibrating pieces at the wafer a size of which is reduced by an amount of the constant distance by selectively removing the wafer by wet etching by constituting a mask by the patterned metal film, and a removing step of removing the metal film.


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