The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Aug. 13, 2008
Applicants:

Sung-kyu JO, Yongin-si, KR;

Yong-tae Yim, Suwon-si, KR;

Inventors:

Sung-Kyu Jo, Yongin-si, KR;

Yong-Tae Yim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/10 (2006.01); G11C 16/04 (2006.01); H03M 13/35 (2006.01); H03M 13/00 (2006.01); G11C 11/56 (2006.01); H03M 13/09 (2006.01); H03M 13/13 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
H03M 13/356 (2013.01); G06F 11/1072 (2013.01); G11C 16/0483 (2013.01); H03M 13/098 (2013.01); H03M 13/13 (2013.01); H03M 13/6306 (2013.01); G11C 2211/5641 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 29/00 (2013.01);
Abstract

Disclosed are program and read methods for a nonvolatile memory system, including determining to program first data in which one of fast and normal modes; providing the first data with an error code generated by a multi-bit ECC engine, in the fast mode, and generating second data; programming the second data in a cell array by a program voltage having a second start level higher than a first start level; and reading the second data from the cell array, the second data being output after processed by the multi-bit ECC engine that detects and corrects an error from the second data.


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