The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Jul. 13, 2012
Bong-yong Lee, Suwon-si, KR;
Jung-in Han, Hwaseong-Si, KR;
Hae-bum Lee, Suwon-si, KR;
Sang-eun Lee, Hwaseong-Si, KR;
Jung-ro Ahn, Suwon-si, KR;
Kyung-jun Shin, Hwaseong-Si, KR;
Tae-hyun Yoon, Seoul, KR;
Bong-Yong Lee, Suwon-si, KR;
Jung-In Han, Hwaseong-Si, KR;
Hae-Bum Lee, Suwon-si, KR;
Sang-Eun Lee, Hwaseong-Si, KR;
Jung-Ro Ahn, Suwon-si, KR;
Kyung-Jun Shin, Hwaseong-Si, KR;
Tae-Hyun Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a non-volatile memory system, a plurality of main memory cells for storing data is arranged in a data cell array and a plurality of reference memory cells is arranged in a reference cell array. The reference cell array includes first reference word lines connected to first reference memory cells and extending, second reference word lines connected to second reference memory cells and extending alternately with the first reference word lines, reference bit lines to which the first and the second reference memory cells are alternately connected in a line and a combined cell having a pair of the first and second reference memory cells and generating a reference signal for processing the data. The first and the second reference memory cells have different cell characteristics. The stability of the reference signal is improved irrespective of the differentiation of the first and the second reference memory cells.