The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Jun. 01, 2011
Matthew J. Breitwisch, Pound Ridge, NY (US);
Roger W. Cheek, Somers, NY (US);
Stefanie R. Chiras, Cedar Park, TX (US);
Ibrahim M. Elfadel, Cortlandt Manor, NY (US);
Michele M. Franceschini, White Plains, NY (US);
John P. Karidis, Ossining, NY (US);
Luis A. Lastras-montano, Cortlandt Manor, NY (US);
Thomas Mittelholzer, Zurich, CH;
Mayank Sharma, White Plains, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Roger W. Cheek, Somers, NY (US);
Stefanie R. Chiras, Cedar Park, TX (US);
Ibrahim M. Elfadel, Cortlandt Manor, NY (US);
Michele M. Franceschini, White Plains, NY (US);
John P. Karidis, Ossining, NY (US);
Luis A. Lastras-Montano, Cortlandt Manor, NY (US);
Thomas Mittelholzer, Zurich, CH;
Mayank Sharma, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Systems, methods, and devices for iteratively writing contents to memory locations are provided. A statistical model is used to determine a sequence of pulses to write desired contents to a memory location. The contents can be expressed as a resistance value in a range to store one or more bits in a memory cell. For phase change memory, an adaptive reset pulse and one or more annealing pulses are selected based on a desired resistance range. Reading the resistance value of the memory cell can provide feedback to determine adjustments in an overall pulse application strategy. The statistical model and a look up table can be used to select and modify pulses. Adaptively updating the statistical model and look up table may reduce the number of looping iterations to shift the resistance value of the memory cell into the desired resistance range.