The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Dec. 19, 2012
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventor:

Chang Yong Ahn, Icheon-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 13/00 (2006.01); G11C 11/02 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0064 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 11/22 (2013.01); G11C 11/02 (2013.01); G11C 13/0069 (2013.01); G11C 13/0061 (2013.01);
Abstract

A method for driving a nonvolatile memory apparatus includes: a data storage preparation step of setting a write control voltage to a first level of voltage; a data storage step of driving a driving transistor through the write control voltage to generate a write current, and storing an external data in a memory cell through the write current; a data detection step of varying the write control voltage by a predetermined level from a preset voltage level, and reading the data stored in the memory cell; and a data verification step of determining whether the stored data coincides with the external data or not, and repeating the data storage step and the data detection step according to a result of the determining.


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