The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
May. 12, 2010
Applicants:
Van Mieczkowski, Apex, NC (US);
Helmut Hagleitner, Zebulon, NC (US);
Kevin Haberern, Cary, NC (US);
Inventors:
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 29/778 (2006.01); H01L 29/24 (2006.01); H01L 29/80 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 29/47 (2013.01); H01L 29/475 (2013.01); H01L 29/66871 (2013.01); H01L 29/7786 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.