The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Feb. 13, 2013
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventor:
Laurent-Luc Chapelon, Domene, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/492 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4924 (2013.01); H01L 24/05 (2013.01); H01L 2224/08145 (2013.01); H01L 24/80 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/05547 (2013.01); H01L 2225/06513 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 2224/06517 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/08147 (2013.01); H01L 25/50 (2013.01); H01L 2224/05687 (2013.01); H01L 24/06 (2013.01); H01L 2224/05688 (2013.01);
Abstract
An assembly of semiconductor wafers/chips wherein the adjacent surfaces of the two wafers/chips comprise an insulating layer having opposite copper pads inserted therein. The insulating layer is made of a material selected from the group including silicon nitride and silicon carbon nitride.