The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Sep. 09, 2011
Applicants:

Yuichi Watanabe, Tatebayashi, JP;

Akira Yamane, Tatebayashi, JP;

Yasuo Oishibashi, Ora-gun, JP;

Inventors:

Yuichi Watanabe, Tatebayashi, JP;

Akira Yamane, Tatebayashi, JP;

Yasuo Oishibashi, Ora-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 27/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 2224/2929 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/01033 (2013.01); H01L 23/49513 (2013.01); H01L 27/0288 (2013.01); H01L 2224/29339 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01047 (2013.01); H01L 2224/83851 (2013.01); H01L 2924/014 (2013.01); H01L 24/49 (2013.01); H01L 23/49589 (2013.01); H01L 2224/05644 (2013.01); H01L 23/49537 (2013.01); H01L 2924/01024 (2013.01); H01L 24/05 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05171 (2013.01); H01L 24/48 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/13055 (2013.01); H01L 24/32 (2013.01); H01L 2224/48245 (2013.01);
Abstract

The invention enhances resistance to a surge in a semiconductor device having a semiconductor die mounted on a lead frame. An N type embedded layer, an epitaxial layer and a P type semiconductor layer are disposed on the front surface of a P type semiconductor substrate forming an IC die. A metal thin film is disposed on the back surface of the semiconductor substrate, and a conductive paste containing silver particles and so on is disposed between the metal thin film and a metal island. When a surge is applied to a pad electrode disposed on the front surface of the semiconductor layer, the surge current flowing from the semiconductor layer into the semiconductor substrate runs toward the metal island through the metal thin film.


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