The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Aug. 27, 2008
Applicants:
Katsumi Kishino, Chiyoda-ku, JP;
Akihiko Kikuchi, Chiyoda-ku, JP;
Inventors:
Katsumi Kishino, Chiyoda-ku, JP;
Akihiko Kikuchi, Chiyoda-ku, JP;
Assignee:
Sophia School Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); C30B 29/60 (2006.01); C30B 23/00 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02642 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); C30B 29/60 (2013.01); H01L 21/02433 (2013.01); H01L 21/02603 (2013.01); C30B 23/00 (2013.01); C30B 29/403 (2013.01);
Abstract
A III nitride structure includes a filmhaving a surface composed of a metal formed in a predetermined region on the surface of a substrate, and a fine columnar crystalcomposed of at least a III nitride semiconductor formed on the surface of the substrate, wherein the spatial occupancy ratio of the fine columnar crystalis higher on the surface of the substratewhere the filmis not formed than that on the film.