The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Feb. 23, 2011
Yoshitaka Sugawara, Hitachi, JP;
Yoshitaka Sugawara, Hitachi, JP;
Other;
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed on a surface of and forming a first junction with the first semiconductor region; a second layer selectively disposed on the first semiconductor region and forming a second junction with the first semiconductor region; a first diode formed by a region including the first junction; a second diode formed by a region including the second junction; and a fourth semiconductor region of a second conductivity type and disposed in the first semiconductor region, between and contacting the first and second junctions. A recess and elevated portion are disposed on the first semiconductor region. The first and the second junctions are formed at different depths. The second diode has a lower built-in potential than the first diode.